WAFER FOUNDRY BRING UP
FIRST LOT SUCCESS 95% PRODUCT WAFER LOT YIELD, 98% PACAKGE YIELD. SARGIC (SELF ALIGNED REFRACTORY GATE IC) 1000 YEAR MTTF
SARGIC III-V PHEMT EPY Fab bring up, 1000 year end of life high speed technology with Air-Bridges TM
Executive Summary
Rescued a non-convergent 6-inch GaAs SARGIC HEMPT EPI fabrication facility that had operated for approximately two years without stable yield, placing a multi-billion-dollar production asset at risk.
Created the full recovery plan and led a cross-functional stabilization effort that decomposed the fabrication flow step-by-step—from substrate acceptance through gate sinter and metallization. Wafer starts were halted, parametric targets were redefined using prior PCM-to-package correlation models, and each process stage was re-centered to achieve deterministic downstream performance.
Selective harvesting of legacy 4-inch inventory extended operational runway while the 6-inch line was reconstructed. Tester-induced variability was eliminated, screening margins were tightened, and cross-step coupling effects were systematically controlled.
After approximately nine months of controlled convergence, the first production lot achieved 92–98% yield across all twelve wafers.
The facility transitioned from prolonged instability to deterministic manufacturing behavior, restoring production confidence, throughput capacity, and capital viability.
Situation
A new 6-inch GaAs SARGIC HEMPT EPI fabrication facility—constructed from the legacy 4-inch line—operated for approximately two years without stable yield convergence, placing a multi-billion-dollar production asset at risk. The 4-inch production line had already been decommissioned.Instability
Over a two-year bring-up period, hundreds of wafers were processed without sustained yield success. The process remained non-convergent, with persistent parametric divergence preventing repeatable manufacturing behavior.Intervention
Assumed responsibility for the 6-inch fab recovery. Created and executed the full stabilization plan while leading a cross-functional technical team. Halted new wafer starts, decomposed the fabrication flow step-by-step, re-centered process parameters using prior PCM-to-package correlation models, pre-compensated gate sinter shifts, and systematically controlled cross-step coupling effects across the full process chain.Result
After approximately nine months of controlled convergence, the first production lot achieved 92–98% yield across all twelve wafers. The facility transitioned from prolonged non-convergent behavior to stable, repeatable, deterministic manufacturing.Capital Impact
Restored viability of a multi-billion-dollar fabrication asset, re-established predictable production throughput, and maintained uninterrupted customer delivery without line-down events—preserving customer relationships and preventing program cancellation.
Abstract
The 6-inch fabrication facility had operated for approximately two years without stable yield convergence. Historical wafer yield on prior lines ranged from 10–50%, and substantial material volume failed to meet production requirements.
Upon assuming leadership, new wafer starts were halted. The fabrication flow was decomposed step-by-step, beginning with substrate acceptance and extending through gate sinter and downstream metallization.
Prior PCM-to-wafer-to-package correlation data was leveraged to identify the parametric conditions required to produce high-yield packaged devices. Each fabrication step was re-aligned to achieve those target parameter outputs, with calibrated test limits established to guarantee downstream package viability.
Gate sinter-induced parameter shifts were pre-compensated, and cross-step coupling effects were controlled across the full fabrication chain.
After approximately nine months of controlled stabilization, the first production lot achieved 92–98% yield across all twelve wafers.
The facility transitioned from non-convergent operation to deterministic manufacturing behavior, restoring internal production confidence and throughput capacity.
Strategic Impact
• Recovered a non-convergent multi-billion-dollar fabrication asset
• Extended operational supply during transition period
• Prevented program cancellation trajectory
• Restored wafer-level economic predictability
• Increased throughput capacity
• Enabled production scaling aligned with demandLink to full paper:


